Tin Sulfide/Gallium Oxide Heterojunctions for Solar Water Splitting

Tin (II) sulfide (SnS) is a promising semiconductor material for next-generation solar energy conversion due to its favorable bandgap, elemental abundance, low toxicity, and cost. A major challenge, however, lie in the open circuit voltages that are typically obtained SnS-based devices. Herein, low-cost solution-phase deposition technique used prepare SnS thin films investigate different junction materials (Ga2O3 In2S3) improve photovoltage water splitting photocathodes. Molecular inks prepared by dissolving powder solvent mixtures of ethylenediamine 1,2-ethanedithiol. then successfully deposited spin coating onto substrates, followed heat treatment at 350°C an inert atmosphere. With photoelectrode based on SnS/Ga2O3 heterojunction, onset potential +0.25 V versus reversible hydrogen electrode (RHE) achieved photoelectrochemical evolution pH 7 phosphate buffer, which until now earliest (highest photovoltage) among nontoxic replacements CdS junctions systems.